EXPLORING BARRIER LAYERS AND INDIUM CONTENT VARIATIONS IN INGAAS MOSFETS: A COMPREHENSIVE SURVEY
Abstract
This survey provides a comprehensive exploration of the intricate relationship between barrier layers and indium content variations in InGaAs (Indium Gallium Arsenide) Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs). As semiconductor technology advances, understanding the impact of these factors on device performance is crucial. This study reviews the diverse barrier layers employed in InGaAs MOSFETs and their influence on device characteristics, such as threshold voltage, subthreshold swing, and transconductance. Additionally, the survey investigates the effect of indium content adjustments on the overall performance of these devices. Through a synthesis of recent research findings, this survey offers insights into the optimization and design of high-performance InGaAs MOSFETs.
Keywords
barrier layers, indium content, semiconductor devicesHow to Cite
References
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