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American Journal of Applied Science and Technology

Peer Reviewed | Open Access | E-ISSN: 2771-2745
Published Article

INFLUENCE OF IMPURITY NI AND CU ATOMS ON THE ELECTROPHYSICAL PROPERTIES OF SI

INFLUENCE OF IMPURITY NI AND CU ATOMS ON THE ELECTROPHYSICAL PROPERTIES OF SI

Authors

  • N.A.Turgunov
    Doctor Of Physical And Mathematical Sciences Scientific Research Institute Of Semiconductor Physics And Microelectronics At The National University Of Uzbekistan, Tashkent, Uzbekistan
  • E.Kh.Berkinov
    Research Associate Scientific Research Institute Of Semiconductor Physics And Microelectronics At The National University Of Uzbekistan, Tashkent, Uzbekistan
  • R.M.Turmanova
    Research Associate Scientific Research Institute Of Semiconductor Physics And Microelectronics At The National University Of Uzbekistan, Tashkent, Uzbekistan

DOI:

https://doi.org/10.37547/ajast/Volume03Issue03-10

Keywords:

Silicon nickel copper

Abstract

The paper presents the results of studies of the electrophysical properties of Si, doped Ni and Cu samples. It is revealed that a decrease in the mobility of charge carriers in the temperature range of 120÷320 K is of particular importance in increasing the resistivity of samples.

References

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Turgunov N.A., Mamajonova D.Kh., Berkinov E.Kh. (2021) Decay of impurity clusters of nickel and cobalt atoms in silicon under the influence of pressure. Journal of nano- and electronic physics 13(5), 05006-1(4).

Turgunov N.A., Berkinov E.X., Mamajonova D.X. (2020) Vliyaniye termicheskoy obrabotki kremniya, legirovannogo nikelem na yego elektricheskiye svoystva. Prikladnaya fizika 3, 40-45.