Articles
| Open Access |
https://doi.org/10.37547/ajast/Volume03Issue03-10
INFLUENCE OF IMPURITY NI AND CU ATOMS ON THE ELECTROPHYSICAL PROPERTIES OF SI
Abstract
The paper presents the results of studies of the electrophysical properties of Si, doped Ni and Cu samples. It is revealed that a decrease in the mobility of charge carriers in the temperature range of 120÷320 K is of particular importance in increasing the resistivity of samples.
Keywords
Silicon, nickel, copper
References
Chang Sun, Hieu T.Nguyena, Fiacre E. Rougieux, Daniel Macdonald. (2016) Characterization of Cu and Ni precipitates in n- and p-type Czochralski-grown silicon by photoluminescence. Energy Procedia 92, 880–885.
Saring Ph. and Seibt M. (2021) Recombination and charge collection at nickel silicide precipitates in silicon studied by electron beam-induced current. Phys. Status Solidi B 258(10), 2100142(1-8).
Zaynabidinov S.Z., Musayev K.N., Turgunov N. A., Turayev A. R. (2012) Mexanizmi obrazovaniya mikroskopleniy primesnix atomov v Si(Mn) I Si(Ni). Neorganicheskiye materiali 48(11), 1195-1199.
Utamuradova Sh.B., Stanchik A.V., Rakhmanov D.A., Doroshkevich A.S., Fayzullaev K.M. (2022) X-ray structural analysis of n-Si, irradiated with alpha particles. New Materials, Compounds and Applications 6(3), 214-219.
Turgunov N., Zainabidinov S., Berkinov E., Akbarov, Sh. (2020) Influence of the clusters of impurient nickel atoms on the crystalline silicon structure. Euroasian Journal of Semiconductors science and engineering 2(5), 19-21.
Turgunov N.A., Mamajonova D.Kh., Berkinov E.Kh. (2021) Decay of impurity clusters of nickel and cobalt atoms in silicon under the influence of pressure. Journal of nano- and electronic physics 13(5), 05006-1(4).
Turgunov N.A., Berkinov E.X., Mamajonova D.X. (2020) Vliyaniye termicheskoy obrabotki kremniya, legirovannogo nikelem na yego elektricheskiye svoystva. Prikladnaya fizika 3, 40-45.