Articles
| Open Access |
DOI:
https://doi.org/10.37547/ajast/Volume02Issue11-09
PROPERTIES OF MOLYBDENUM SILICIDE GROWN ON SILICON SINGLE CRYSTALS
S.A. Muzafarova , Institute Of Semiconductor Physics And Microelectronics At The National University Of Uzbekistan K.M. Fayzullaev , Institute Of Semiconductor Physics And Microelectronics At The National University Of Uzbekistan M.R. Kayumova , Tashkent Chemical Technology Institute, Uzbekistan G.T. Badalova , Tashkent Chemical Technology Institute, UzbekistanAbstract
This paper presents the properties of compounds of molybdenum silicide Mo - Si. The molybdenum layer was formed with a thickness of 1 ÷ 2 μm by magnetron sputtering onto the surface of a semiconductor from a silicon single crystal grown by the Czochralski method in an atmosphere of pure inert argon gas. The properties of molybdenum silicide formed in the volume of silicon have been studied.
Keywords
Magnetron sputtering, reactive gases, metal, semiconductor, silicide
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