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American Journal of Applied Science and Technology

Peer Reviewed | Open Access | E-ISSN: 2771-2745
Published Article

EFFECT OF TEMPERATURE ON THE STRAIN SENSITIVITY OF MANGANESE-COMPENSATED SILICON

EFFECT OF TEMPERATURE ON THE STRAIN SENSITIVITY OF MANGANESE-COMPENSATED SILICON

Authors

  • I.G.Tursunov
    Chirchik State Pedagogical University, Uzbekistan
  • M.A.Rakhmanov
    Chirchik State Pedagogical University, Uzbekistan

DOI:

https://doi.org/10.37547/ajast/Volume04Issue11-03

Keywords:

Semiconductors strain gauge deep levels

Abstract

In this paper, the strain gauge response of manganese-doped silicon is studied as a function of manganese concentration, ranging from 1×10¹² cm⁻³ to 1×10¹⁵ cm⁻³, at different temperatures. Mathematical modeling is performed, including calculations and plotting of graphs illustrating how the strain gauge response depends on manganese concentration and temperature.

References

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Sidorov S.S. Strain sensitivity of deep levels in silicon // Proceedings of the conference on semiconductors. - 2012. - P. 156–160.

Zhang X., Li Y. Effect of Compensation on Piezoresistance in Silicon // Journal of Semiconductor Science and Technology. — 2015. — Vol. 30. - No. 5. - P. 055012.