Articles
| Open Access |
DOI:
https://doi.org/10.37547/ajast/Volume04Issue11-03
EFFECT OF TEMPERATURE ON THE STRAIN SENSITIVITY OF MANGANESE-COMPENSATED SILICON
I.G.Tursunov , Chirchik State Pedagogical University, Uzbekistan M.A.Rakhmanov , Chirchik State Pedagogical University, UzbekistanAbstract
In this paper, the strain gauge response of manganese-doped silicon is studied as a function of manganese concentration, ranging from 1×10¹² cm⁻³ to 1×10¹⁵ cm⁻³, at different temperatures. Mathematical modeling is performed, including calculations and plotting of graphs illustrating how the strain gauge response depends on manganese concentration and temperature.
Keywords
Semiconductors, strain gauge, deep levels
References
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Sidorov S.S. Strain sensitivity of deep levels in silicon // Proceedings of the conference on semiconductors. - 2012. - P. 156–160.
Zhang X., Li Y. Effect of Compensation on Piezoresistance in Silicon // Journal of Semiconductor Science and Technology. — 2015. — Vol. 30. - No. 5. - P. 055012.
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