EFFECT OF TEMPERATURE ON THE STRAIN SENSITIVITY OF MANGANESE-COMPENSATED SILICON

Authors

  • I.G.Tursunov Chirchik State Pedagogical University, Uzbekistan
  • M.A.Rakhmanov Chirchik State Pedagogical University, Uzbekistan

DOI:

https://doi.org/10.37547/ajast/Volume04Issue11-03

Keywords:

Semiconductors, strain gauge, deep levels

Abstract

In this paper, the strain gauge response of manganese-doped silicon is studied as a function of manganese concentration, ranging from 1×10¹² cm⁻³ to 1×10¹⁵ cm⁻³, at different temperatures. Mathematical modeling is performed, including calculations and plotting of graphs illustrating how the strain gauge response depends on manganese concentration and temperature.

References

Ivanov I.I., Petrov P.P. Influence of mechanical stresses on the properties of compensated semiconductors // Physics and technology of semiconductors. - 2010. - V. 44. - No. 7. - P. 825-830.

Sidorov S.S. Strain sensitivity of deep levels in silicon // Proceedings of the conference on semiconductors. - 2012. - P. 156–160.

Zhang X., Li Y. Effect of Compensation on Piezoresistance in Silicon // Journal of Semiconductor Science and Technology. — 2015. — Vol. 30. - No. 5. - P. 055012.

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Published

2024-11-04

How to Cite

I.G.Tursunov, & M.A.Rakhmanov. (2024). EFFECT OF TEMPERATURE ON THE STRAIN SENSITIVITY OF MANGANESE-COMPENSATED SILICON. American Journal of Applied Science and Technology, 4(11), 14–21. https://doi.org/10.37547/ajast/Volume04Issue11-03

Issue

Vol. 4 No. 11 (2024): Volume 04 Issue 11

Section

Articles

License

Copyright (c) 2024 I.G.Tursunov, M.A.Rakhmanov

Creative Commons License

This work is licensed under a Creative Commons Attribution 4.0 International License.