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American Journal of Applied Science and Technology

Peer Reviewed | Open Access | E-ISSN: 2771-2745
Published Article

INVESTIGATION OF CLUSTER-TYPE INHOMOGENEITY IN SEMICONDUCTORS

INVESTIGATION OF CLUSTER-TYPE INHOMOGENEITY IN SEMICONDUCTORS

Authors

  • O.S. Rayimjonova
    Head of the Department of Telecommunication Engineering, Tashkent University of Information Technologies Fergana branch, Uzbekistan

DOI:

https://doi.org/10.37547/ajast/Volume02Issue06-15

Keywords:

AFS - elements photovoltaic magneto-optical electro-optical properties

Abstract

The paper studies the effect of cluster-type inhomogeneity on the properties of AFN - elements from crystalline and thin-film structures of gallium arsenide and gallium phosphide. The effects of birefringence, magneto-optical and electro-optical are studied.