Articles
| Open Access |
https://doi.org/10.37547/ajast/Volume02Issue06-15
INVESTIGATION OF CLUSTER-TYPE INHOMOGENEITY IN SEMICONDUCTORS
Published Date
2022-06-30
Pages
94-97
27
17
Abstract
The paper studies the effect of cluster-type inhomogeneity on the properties of AFN - elements from crystalline and thin-film structures of gallium arsenide and gallium phosphide. The effects of birefringence, magneto-optical and electro-optical are studied.
Keywords
AFS - elements, photovoltaic, magneto-optical, electro-optical properties
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How to Cite
O.S. Rayimjonova. (2022). INVESTIGATION OF CLUSTER-TYPE INHOMOGENEITY IN SEMICONDUCTORS. American Journal of Applied Science and Technology, 2(06), 94–97. https://doi.org/10.37547/ajast/Volume02Issue06-15