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American Journal of Applied Science and Technology

Peer Reviewed | Open Access | E-ISSN: 2771-2745
Published Article

STRUCTURAL STUDIES OF FILMS CADMIUM TELLURIDE GROWN ON SILICON SUBSTRATES

STRUCTURAL STUDIES OF FILMS CADMIUM TELLURIDE GROWN ON SILICON SUBSTRATES

Authors

  • Sh.B. Utamuraova
    Institute of Semiconductor Physics and Microelectronics at NUUz, Tashkent, Uzbekistan
  • N.A. Turgunov
    Institute of Semiconductor Physics and Microelectronics at NUUz, Tashkent, Uzbekistan
  • S.A. Muzafarova
    Institute of Semiconductor Physics and Microelectronics at NUUz, Tashkent, Uzbekistan
  • K.M. Fayzullaev
    Institute of Semiconductor Physics and Microelectronics at NUUz, Tashkent, Uzbekistan

DOI:

https://doi.org/10.37547/ajast/Volume02Issue09-04

Keywords:

Cadmium tellurium silicon films

Abstract

Cadmium telluride films are grown on single-crystal silicon substrates by vacuum deposition in a quasi-closed volume. CdTe films were studied by atomic force and scanning electron microscopy.